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FZ1200R16KF4, FZ1200R16KF4,FZ1200R16KF,FZ1200R16K,FZ1200R16,FZ1200R16,FZ1200R,FZ1200,FZ120,FZ12,FZ1,FZ,F, ,نامی صنعت,تجهیزات صنعتی برق صنعتی,namisanat,نامی صنعت,تجهیزات صنعتی,نمایندگی فروش سایر برند ها,نمایندگی فوش ایر برند های ABB,IFM,TRANSISTOR,IGBT,ind.electronics,الکترونیک صنعتیind,electronics,الکترونیک, صنعتی,Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage VCES 1600 V Kollektor-Dauergleichstrom DC-collector current IC 1200 A Periodischer Kollektor Spitzenstrom repetitive peak collector current tp=1 ms ICRM 2400 A Gesamt-Verlustleistung total power dissipation tC=25°C, Transistor /transistor Ptot 7800 W Gate-Emitter-Spitzenspannung gate-emitter peak voltage VGE ± 20 V Dauergleichstrom DC forward current IF 1200 A Periodischer Spitzenstrom repetitive peak forw. current tp=1ms IFRM 2400 A Isolations-Prüfspannung insulation test voltage RMS, f=50 Hz, t= 1 min. VISOL 3,4 kV Charakteristische Werte / Characteristic values: Transistor min. typ. max. Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage iC=1,2kA, vGE=15V, t vj=25°C vCE sat - 3,5 3,9 V iC=1,2kA, vGE=15V, t vj=125°C - 4,6 5 V Gate-Schwellenspannung gate threshold voltage iC=80mA, vCE=vGE , t vj=25°C vGE(TO) 4,5 5,5 6,5 V Eingangskapazität input capacity fO=1MHz,t vj=25°C,vCE=25V, vGE=0V Cies - 180 - nF Kollektor-Emitter Reststrom collector-emitter cut-off current vCE=1600V, vGE=0V, t vj=25°C iCES - 8 - mA vCE=1600V, vGE=0V, t vj=125°C - 80 - mA Gate-Emitter Reststrom gate leakage current vCE=0V, v GE=20V, t vj=25°C iGES - - 400 nA Emitter-Gate Reststrom gate leakage current vCE=0V, vEG=20V, t vj=25°C iEGS - - 400 nA Einschaltzeit (induktive Last) turn-on time (inductive load) iC=1,2kA,vCE=900V,vL=±15V ton RG=1,8W, t vj=25°C - 0,8 - µs RG=1,8W, t vj=125°C - 1 - µs Speicherzeit (induktive Last) storage time (inductive load) iC=1,2kA,vCE=900V,vL=±15V ts RG=1,8W, t vj=25°C - 1,1 - µs RG=1,8W, t vj=125°C - 1,3 - µs Fallzeit (induktive Last) fall time (inductive load) iC=1,2kA,vCE=900V,vL=±15V t f RG=1,8W, t vj=25°C - 0,25 - µs RG=1,8W, t vj=125°C - 0,3 - µs Charakteristische Werte / Characteristic values Transistor / Transistor Einschaltverlustenergie pro Puls turn-on energy loss per pulse iC=1,2kA,vCE=900V,vL=±15V Eon RG=1,8W, t vj=125°C, LS=70nH - 490 - mWs Abschaltverlustenergie pro Puls turn-off energy loss per pulse iC=1,2kA,vCE=900V,vL=±15V Eoff RG=1,8W, tvj=125°C, LS=70nH - 290 - mWs Inversdiode / Inverse diode Durchlaßspannung forward voltage iF=1200A, vGE=0V, t vj=25°C vF - 2,4 2,8 V iF=1200A, vGE=0V, t vj=125°C - 2,2 - V Rückstromspitze peak reverse recovery current iF=1,2kA, -diF /dt=6kA/µs IRM vRM=900V, vEG=10V, t vj=25°C - 460 - A vRM=900V, vEG=10V, t vj=125°C - 640 - A Sperrverzögerungsladung recovered charge iF=1,2kA, -diF /dt=6kA/µs Qr vRM=900V, vEG=10V, t vj=25°C - 100 - µAs, vRM=900V, vEG=10V, t, vj=125°C - 220 - µAs, Thermische Eigenschaften / Thermal properties, Innerer Wärmewiderstand thermal resistance, junction to case Transistor / ,transistor, DC RthJC 0,016 °C/W, Diode /diode, DC 0,04 °C/W, Übergangs-Wärmewiderstand thermal resistance, case to heatsink pro Module / per, Module RthCK 0,008 °C/W, Höchstzul. Sperrschichttemperatur max. junction temperature t, vj max 150 °C, Betriebstemperatur operating temperature t, c op, -40...+125 °C, Lagertemperatu,r storage temperature t, stg, -40...+125 °C, Mechanische Eigenschaften / Mechanical pr,operties, Innere Isolation internal insulation Al2O3, Anzugsdrehmoment f. mech. Befestigung / mounting torque terminals M6 / ,tolerance ±10% M1 3 Nm, Anzugsdrehmoment f. elektr. Anschlüsse / terminal connection torque terminals M4 / tolerance +5/-10% M2 2 Nm, terminals M8 8...10 Nm, Gewicht weight G ca. 1500 g,FZ1200R16KF4, FZ1200R16KF4,FZ1200R16KF,FZ1200R16K,FZ1200R16,FZ1200R16,FZ1200R,FZ1200,FZ120,FZ12,FZ1,FZ,F, ,نامی صنعت,تجهیزات صنعتی برق صنعتی,namisanat,نامی صنعت,تجهیزات صنعتی,نمایندگی فروش سایر برند ها,نمایندگی فوش ایر برند های ABB,IFM,TRANSISTOR,IGBT,ind.electronics,الکترونیک صنعتیind,electronics,الکترونیک, صنعتی,Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage VCES 1600 V Kollektor-Dauergleichstrom DC-collector current IC 1200 A Periodischer Kollektor Spitzenstrom repetitive peak collector current tp=1 ms ICRM 2400 A Gesamt-Verlustleistung total power dissipation tC=25°C, Transistor /transistor Ptot 7800 W Gate-Emitter-Spitzenspannung gate-emitter peak voltage VGE ± 20 V Dauergleichstrom DC forward current IF 1200 A Periodischer Spitzenstrom repetitive peak forw. current tp=1ms IFRM 2400 A Isolations-Prüfspannung insulation test voltage RMS, f=50 Hz, t= 1 min. VISOL 3,4 kV Charakteristische Werte / Characteristic values: Transistor min. typ. max. Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage iC=1,2kA, vGE=15V, t vj=25°C vCE sat - 3,5 3,9 V iC=1,2kA, vGE=15V, t vj=125°C - 4,6 5 V Gate-Schwellenspannung gate threshold voltage iC=80mA, vCE=vGE , t vj=25°C vGE(TO) 4,5 5,5 6,5 V Eingangskapazität input capacity fO=1MHz,t vj=25°C,vCE=25V, vGE=0V Cies - 180 - nF Kollektor-Emitter Reststrom collector-emitter cut-off current vCE=1600V, vGE=0V, t vj=25°C iCES - 8 - mA vCE=1600V, vGE=0V, t vj=125°C - 80 - mA Gate-Emitter Reststrom gate leakage current vCE=0V, v GE=20V, t vj=25°C iGES - - 400 nA Emitter-Gate Reststrom gate leakage current vCE=0V, vEG=20V, t vj=25°C iEGS - - 400 nA Einschaltzeit (induktive Last) turn-on time (inductive load) iC=1,2kA,vCE=900V,vL=±15V ton RG=1,8W, t vj=25°C - 0,8 - µs RG=1,8W, t vj=125°C - 1 - µs Speicherzeit (induktive Last) storage time (inductive load) iC=1,2kA,vCE=900V,vL=±15V ts RG=1,8W, t vj=25°C - 1,1 - µs RG=1,8W, t vj=125°C - 1,3 - µs Fallzeit (induktive Last) fall time (inductive load) iC=1,2kA,vCE=900V,vL=±15V t f RG=1,8W, t vj=25°C - 0,25 - µs RG=1,8W, t vj=125°C - 0,3 - µs Charakteristische Werte / Characteristic values Transistor / Transistor Einschaltverlustenergie pro Puls turn-on energy loss per pulse iC=1,2kA,vCE=900V,vL=±15V Eon RG=1,8W, t vj=125°C, LS=70nH - 490 - mWs Abschaltverlustenergie pro Puls turn-off energy loss per pulse iC=1,2kA,vCE=900V,vL=±15V Eoff RG=1,8W, tvj=125°C, LS=70nH - 290 - mWs Inversdiode / Inverse diode Durchlaßspannung forward voltage iF=1200A, vGE=0V, t vj=25°C vF - 2,4 2,8 V iF=1200A, vGE=0V, t vj=125°C - 2,2 - V Rückstromspitze peak reverse recovery current iF=1,2kA, -diF /dt=6kA/µs IRM vRM=900V, vEG=10V, t vj=25°C - 460 - A vRM=900V, vEG=10V, t vj=125°C - 640 - A Sperrverzögerungsladung recovered charge iF=1,2kA, -diF /dt=6kA/µs Qr vRM=900V, vEG=10V, t vj=25°C - 100 - µAs, vRM=900V, vEG=10V, t, vj=125°C - 220 - µAs, Thermische Eigenschaften / Thermal properties, Innerer Wärmewiderstand thermal resistance, junction to case Transistor / ,transistor, DC RthJC 0,016 °C/W, Diode /diode, DC 0,04 °C/W, Übergangs-Wärmewiderstand thermal resistance, case to heatsink pro Module / per, Module RthCK 0,008 °C/W, Höchstzul. Sperrschichttemperatur max. junction temperature t, vj max 150 °C, Betriebstemperatur operating temperature t, c op, -40...+125 °C, Lagertemperatu,r storage temperature t, stg, -40...+125 °C, Mechanische Eigenschaften / Mechanical pr,operties, Innere Isolation internal insulation Al2O3, Anzugsdrehmoment f. mech. Befestigung / mounting torque terminals M6 / ,tolerance ±10% M1 3 Nm, Anzugsdrehmoment f. elektr. Anschlüsse / terminal connection torque terminals M4 / tolerance +5/-10% M2 2 Nm, terminals M8 8...10 Nm, Gewicht weight G ca. 1500 g,FZ1200R16KF4, FZ1200R16KF4,FZ1200R16KF,FZ1200R16K,FZ1200R16,FZ1200R16,FZ1200R,FZ1200,FZ120,FZ12,FZ1,FZ,F, ,نامی صنعت,تجهیزات صنعتی برق صنعتی,namisanat,نامی صنعت,تجهیزات صنعتی,نمایندگی فروش سایر برند ها,نمایندگی فوش ایر برند های ABB,IFM,TRANSISTOR,IGBT,ind.electronics,الکترونیک صنعتیind,electronics,الکترونیک, صنعتی,Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage VCES 1600 V Kollektor-Dauergleichstrom DC-collector current IC 1200 A Periodischer Kollektor Spitzenstrom repetitive peak collector current tp=1 ms ICRM 2400 A Gesamt-Verlustleistung total power dissipation tC=25°C, Transistor /transistor Ptot 7800 W Gate-Emitter-Spitzenspannung gate-emitter peak voltage VGE ± 20 V Dauergleichstrom DC forward current IF 1200 A Periodischer Spitzenstrom repetitive peak forw. current tp=1ms IFRM 2400 A Isolations-Prüfspannung insulation test voltage RMS, f=50 Hz, t= 1 min. VISOL 3,4 kV Charakteristische Werte / Characteristic values: Transistor min. typ. max. Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage iC=1,2kA, vGE=15V, t vj=25°C vCE sat - 3,5 3,9 V iC=1,2kA, vGE=15V, t vj=125°C - 4,6 5 V Gate-Schwellenspannung gate threshold voltage iC=80mA, vCE=vGE , t vj=25°C vGE(TO) 4,5 5,5 6,5 V Eingangskapazität input capacity fO=1MHz,t vj=25°C,vCE=25V, vGE=0V Cies - 180 - nF Kollektor-Emitter Reststrom collector-emitter cut-off current vCE=1600V, vGE=0V, t vj=25°C iCES - 8 - mA vCE=1600V, vGE=0V, t vj=125°C - 80 - mA Gate-Emitter Reststrom gate leakage current vCE=0V, v GE=20V, t vj=25°C iGES - - 400 nA Emitter-Gate Reststrom gate leakage current vCE=0V, vEG=20V, t vj=25°C iEGS - - 400 nA Einschaltzeit (induktive Last) turn-on time (inductive load) iC=1,2kA,vCE=900V,vL=±15V ton RG=1,8W, t vj=25°C - 0,8 - µs RG=1,8W, t vj=125°C - 1 - µs Speicherzeit (induktive Last) storage time (inductive load) iC=1,2kA,vCE=900V,vL=±15V ts RG=1,8W, t vj=25°C - 1,1 - µs RG=1,8W, t vj=125°C - 1,3 - µs Fallzeit (induktive Last) fall time (inductive load) iC=1,2kA,vCE=900V,vL=±15V t f RG=1,8W, t vj=25°C - 0,25 - µs RG=1,8W, t vj=125°C - 0,3 - µs Charakteristische Werte / Characteristic values Transistor / Transistor Einschaltverlustenergie pro Puls turn-on energy loss per pulse iC=1,2kA,vCE=900V,vL=±15V Eon RG=1,8W, t vj=125°C, LS=70nH - 490 - mWs Abschaltverlustenergie pro Puls turn-off energy loss per pulse iC=1,2kA,vCE=900V,vL=±15V Eoff RG=1,8W, tvj=125°C, LS=70nH - 290 - mWs Inversdiode / Inverse diode Durchlaßspannung forward voltage iF=1200A, vGE=0V, t vj=25°C vF - 2,4 2,8 V iF=1200A, vGE=0V, t vj=125°C - 2,2 - V Rückstromspitze peak reverse recovery current iF=1,2kA, -diF /dt=6kA/µs IRM vRM=900V, vEG=10V, t vj=25°C - 460 - A vRM=900V, vEG=10V, t vj=125°C - 640 - A Sperrverzögerungsladung recovered charge iF=1,2kA, -diF /dt=6kA/µs Qr vRM=900V, vEG=10V, t vj=25°C - 100 - µAs, vRM=900V, vEG=10V, t, vj=125°C - 220 - µAs, Thermische Eigenschaften / Thermal properties, Innerer Wärmewiderstand thermal resistance, junction to case Transistor / ,transistor, DC RthJC 0,016 °C/W, Diode /diode, DC 0,04 °C/W, Übergangs-Wärmewiderstand thermal resistance, case to heatsink pro Module / per, Module RthCK 0,008 °C/W, Höchstzul. Sperrschichttemperatur max. junction temperature t, vj max 150 °C, Betriebstemperatur operating temperature t, c op, -40...+125 °C, Lagertemperatu,r storage temperature t, stg, -40...+125 °C, Mechanische Eigenschaften / Mechanical pr,operties, Innere Isolation internal insulation Al2O3, Anzugsdrehmoment f. mech. Befestigung / mounting torque terminals M6 / ,tolerance ±10% M1 3 Nm, Anzugsdrehmoment f. elektr. Anschlüsse / terminal connection torque terminals M4 / tolerance +5/-10% M2 2 Nm, terminals M8 8...10 Nm, Gewicht weight G ca. 1500 g,

FZ1200R16KF4

Eupec / Eupec

Group: Ind. Electronics

Subgroup: Transistor

SubSubgroup: IGBT

Brand: Eupec

Detail:

FZ1200R16KF4

IGBT

DATASHEET

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